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BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
Rev. 3 -- 18 November 2010 Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA
[1] [2]
f (MHz) 2110 to 2170 2110 to 2170
IDq (mA) 950 950
VDS (V) 28 28
PL(AV) (W) 30 33
Gp (dB) 18.5 18.5
D (%) 32 33
ACPR (dBc) -32[1] -39[2]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range
NXP Semiconductors
BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
Graphic symbol
BLF7G22L-130 (SOT502A)
1 3 2 2 3
sym112
1
BLF7G22LS-130 (SOT502B) 1 2 3 drain gate source
[1]
1 3 2 2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name Description BLF7G22L-130 BLF7G22LS-130 flanged LDMOST ceramic package; 2 mounting holes; 2 leads earless flanged LDMOST ceramic package; 2 leads Version SOT502A SOT502B Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 65 +13 28 +150 225 Unit V V A C C
BLF7G22L-130_7G22LS-130
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Product data sheet
Rev. 3 -- 18 November 2010
2 of 15
NXP Semiconductors
BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
5. Thermal characteristics
Table 5. Symbol Rth(j-c) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL = 30 W Typ Unit 0.35 K/W
6. Characteristics
Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance Conditions VGS = 0 V; ID = 1.5 mA VDS = 10 V; ID = 150 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 7.5 A VGS = VGS(th) + 3.75 V; ID = 5.25 A Min Typ 65 1.3 25 1.8 29.5 10 0.1 Max Unit 2.3 5 450 11 V V A A nA S
0.16
7. Test information
Table 7. Functional test information Mode of operation: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 64 DPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 950 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol PL(AV) Gp RLin D ACPR Parameter average output power power gain input return loss drain efficiency adjacent channel power ratio PL(AV) = 30 W PL(AV) = 30 W PL(AV) = 30 W PL(AV) = 30 W Conditions Min 17 29 Typ Max 30 -15 32 -31 -19 -28 18.5 Unit W dB dB % dBc
7.1 Ruggedness in class-AB operation
The BLF7G22L-130 and BLF7G22LS-130 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 950 mA; PL = 130 W (CW); f = 2110 MHz.
BLF7G22L-130_7G22LS-130
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 18 November 2010
3 of 15
NXP Semiconductors
BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
7.2 Impedance information
Table 8. Typical impedance information IDq = 950 mA; main transistor VDS = 28 V. ZS and ZL defined in Figure 1. f (MHz) 2050 2140 2230 ZS () 1.3 - j3.6 1.9 - j4.2 3.1 - j4.7 ZL () 2.2 - j2.6 2.0 - j2.6 1.9 - j2.8
drain ZL gate ZS
001aaf059
Fig 1.
Definition of transistor impedance
BLF7G22L-130_7G22LS-130
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 18 November 2010
4 of 15
NXP Semiconductors
BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
7.3 1 Tone CW
19 Gp (dB) 18
(1) (2) 001aal341
60 D (%) 40
001aal342
(1) (2) (3)
17
(3)
16 20 15
14 0 40 80 120 PL (W) 160
0 0 40 80 120 PL (W) 160
VDS = 28 V; IDq = 950 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz
VDS = 28 V; IDq = 950 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz
Fig 2.
Power gain as a function of load power; typical values
0 RLin (dB) -10
Fig 3.
Drain efficiency as a function of load power; typical values
001aal352
(1)
(2)
-20
(3)
-30
0
10
20
30
40
50
60 PL (W)
70
VDS = 28 V; IDq = 950 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz
Fig 4.
Input return loss as a function of load power; typical values
BLF7G22L-130_7G22LS-130
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 18 November 2010
5 of 15
NXP Semiconductors
BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
7.4 1-carrier W-CDMA
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
20 Gp (dB) 19
(3) (2) (1)
001aal345
60 D (%) 40
(1) (2)
001aal346
18
17 20 16
(3)
15 0 30 60 PL (W) 90
0 0 30 60 PL (W) 90
VDS = 28 V; IDq = 950 mA. (1) f = 2112.5 MHz (2) f = 2140 MHz (3) f = 2167.5 MHz
VDS = 28 V; IDq = 950 mA. (1) f = 2112.5 MHz (2) f = 2140 MHz (3) f = 2167.5 MHz
Fig 5.
Power gain as a function of load power; typical values
0
001aal348
Fig 6.
Drain efficiency as a function of load power; typical values
8
001aal347
ACPR5M (dBc) -20
(1) (2) (3)
PAR (dB) 6
(1) (2) (3)
4
-40 2
-60
0 0 30 60 PL (W) 90 0 30 60 PL (W) 90
VDS = 28 V; IDq = 950 mA. (1) f = 2112.5 MHz (2) f = 2140 MHz (3) f = 2167.5 MHz
VDS = 28 V; IDq = 950 mA. (1) f = 2112.5 MHz (2) f = 2140 MHz (3) f = 2167.5 MHz
Fig 7.
Adjacent channel power ratio (5MHz) as a function of load power; typical values
Fig 8.
Peak-to-average power ratio as a function of load power; typical values
BLF7G22L-130_7G22LS-130
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 18 November 2010
6 of 15
NXP Semiconductors
BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
7.5 2-carrier W-CDMA (5 MHz carrier spacing)
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF.
20 Gp (dB) 19
(3) (2) (1)
001aal351
50 D (%) 40
(1)
001aal353
18
30
(2) (3)
17
20
16
10
15 0 10 20 30 40 50 60 PL (W) 70
0 0 10 20 30 40 50 60 PL (W) 70
VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz. (1) f = 2115 MHz (2) f = 2140 MHz (3) f = 2165 MHz
VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz. (1) f = 2115 MHz (2) f = 2140 MHz (3) f = 2165 MHz
Fig 9.
Power gain as a function of load power; typical values
0 ACPR5M (dBc) -20
Fig 10. drain efficiency as a function of load power; typical values
001aal354
(1)
(2)
(3)
-40
-60
0
10
20
30
40
50
60 PL (W)
70
VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz. (1) f = 2115 MHz (2) f = 2140 MHz (3) f = 2165 MHz
Fig 11. Adjacent channel power ratio (5 MHz) as a function of load power; typical values
BLF7G22L-130_7G22LS-130
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 18 November 2010
7 of 15
NXP Semiconductors
BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
7.6 2-carrier W-CDMA (10 MHz carrier spacing)
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF.
20 Gp (dB) 19
(3) (2) (1)
001aal355
50 D (%) 40
(1)
001aal356
18
30
(2) (3)
17
20
16
10
15 0 10 20 30 40 50 60 PL (W) 70
0 0 10 20 30 40 50 60 PL (W) 70
VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. (1) f = 2117.5 MHz (2) f = 2140 MHz (3) f = 2162.5 MHz
VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. (1) f = 2117.5 MHz (2) f = 2140 MHz (3) f = 2162.5 MHz
Fig 12. Power gain as a function of load power; typical values
0 ACPR5M (dBc) -20
(1) (2) (3) 001aal357
Fig 13. Drain efficiency as a function of load power; typical values
0 ACPR10M (dBc) -20
001aal358
(1)
(2)
(3)
-40
-40
-60
0
10
20
30
40
50
60 PL (W)
70
-60
0
10
20
30
40
50
60 PL (W)
70
VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. (1) f = 2117.5 MHz (2) f = 2140 MHz (3) f = 2162.5 MHz
VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. (1) f = 2117.5 MHz (2) f = 2140 MHz (3) f = 2162.5 MHz
Fig 14. Adjacent channel power ratio (5 MHz) as a function of load power; typical values
Fig 15. Adjacent channel power ratio (10 MHz) as a function of load power; typical values
BLF7G22L-130_7G22LS-130
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 18 November 2010
8 of 15
NXP Semiconductors
BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
7.7 Test circuit
C3 C6 R1 C2
C8 C9 C11
C1
C5
BLF7G22LS-130 OUTPUT V1 RO4350 30MIL RSN BLF7G22LS-130 INPUT V1 RO4350 30MIL RSN
C4 C7 C10
001aal359
See Table 9 for list of components. The drawing is not to scale.
Fig 16. Component layout Table 9. List of components See Figure 16 for component layout. Component C1, C2, C3, C4, C5 C6, C7 C8, C9, C10 C11 R1 Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor SMD resistor Value 9.1 pF 220 nF 4.7 F; 50 V 220 F; 63 V 6.2 Remarks ATC100B AVX1206 Kemet BC Philips 1206
BLF7G22L-130_7G22LS-130
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 18 November 2010
9 of 15
NXP Semiconductors
BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
8. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
D
A
3
D1
F
U1 q C
B c
1
L
H
U2
p w1 M A M B M
E1
E
A
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
Fig 17. Package outline SOT502A
BLF7G22L-130_7G22LS-130 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 18 November 2010
10 of 15
NXP Semiconductors
BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A F
3
D1 D
U1
c
L
1
H
U2
E1
E
2
b w2 M D M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.067 0.815 0.057 0.805
0.390 0.010 0.380
OUTLINE VERSION SOT502B
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 03-01-10 07-05-09
Fig 18. Package outline SOT502B
BLF7G22L-130_7G22LS-130 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 18 November 2010
11 of 15
NXP Semiconductors
BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
9. Abbreviations
Table 10. Acronym 3GPP CCDF CW DPCH ESD LDMOS LDMOST PAR RF SMD VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel ElectroStatic Discharge Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal Oxide Semiconductor Transistor Peak-to-Average power Ratio Radio Frequency Surface Mounted Device Voltage Standing Wave Ratio Wideband Code Division Multiple Access
10. Revision history
Table 11. Revision history Release date 20101118 Data sheet status Product data sheet Change notice Supersedes BLF7G22LS-130 v.2 Document ID BLF7G22L-130_7G22LS-130 v.3 Modifications:
* * * * * * * * * * * * *
Table 1 on page 1: the value for D for the 1-carrier W-CDMA signal has been changed. Table 4 on page 2: drain current has been added to the table. Table 4 on page 2: the maximum value of Tj has been changed. Table 7 on page 3: a correction was made to the table description [64 DPCH]. Table 7 on page 3: the symbol for input return loss has been changed. Table 7 on page 3: the minimum value for RLin has been removed. Table 7 on page 3: the values of RLin have been projected on a negative scale. Table 7 on page 3: for ACPR the distinction between the two products has been removed. Section 7.2 on page 4: added `Impedance information' section Section 7.3 on page 5: the graphs have been reorganized and some corrections have been made. Section 7.4 on page 6: the graphs have been reorganized and some corrections have been made. Section 7.5 on page 7: the graphs have been reorganized and some corrections have been made. Section 7.6 on page 8: the graphs have been reorganized and some corrections have been made. Product data sheet Product data sheet BLF7G22LS-130 v.1 -
BLF7G22L-130_7G22LS-130 v.2 BLF7G22LS-130 v.1
20101004 20100202
BLF7G22L-130_7G22LS-130
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 18 November 2010
12 of 15
NXP Semiconductors
BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
11. Legal information
11.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
(c) NXP B.V. 2010. All rights reserved.
11.3
Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or
BLF7G22L-130_7G22LS-130
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Product data sheet
Rev. 3 -- 18 November 2010
13 of 15
NXP Semiconductors
BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications.
Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF7G22L-130_7G22LS-130
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 -- 18 November 2010
14 of 15
NXP Semiconductors
BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
13. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 1 Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 2-carrier W-CDMA (5 MHz carrier spacing) . . . 7 2-carrier W-CDMA (10 MHz carrier spacing) . . 8 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 18 November 2010 Document identifier: BLF7G22L-130_7G22LS-130

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